Samsung Details 2nm and 1.4nm Chip Node Plans

Samsung Foundry announced its roadmap for advanced semiconductor manufacturing, detailing plans for its 2-nanometer (nm) process technology and discussing future 1.4nm nodes. The company aims to begin mass production of its 2nm GAA (Gate-All-Around) technology in 2027, targeting high-performance computing and mobile applications. This next-generation node is expected to offer significant improvements in power efficiency and performance compared to current 3nm processes.

Further into the future, Samsung is targeting the introduction of its 1.4nm process technology by 2029. This ambitious goal signifies Samsung's commitment to staying at the forefront of semiconductor innovation. The 1.4nm node is anticipated to deliver even greater density and power savings, enabling the development of more advanced and energy-efficient electronic devices. The company's ongoing investment in research and development for these cutting-edge nodes underscores its strategic focus on capturing a larger share of the foundry market.

Samsung's foundry business has been actively working to compete with established players like TSMC. The company's strategy involves offering a diverse range of process technologies to cater to various customer needs, from high-volume mobile chips to specialized AI and HPC applications. The development of these sub-3nm nodes is crucial for attracting leading fabless semiconductor companies seeking the most advanced manufacturing capabilities for their next-generation products. Samsung's progress in these areas will be closely watched by the industry.